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128Mb: x16 Mobile SDRAM
Features
Mobile SDRAM
MT48H8M16LF - 2 Meg x 16 x 4 banks
Features
? V DD /V DD Q = 1.70–1.95V
? Fully synchronous; all signals registered on positive
Figure 1:
54-Ball VFBGA Assignment
(Top View)
edge of system clock
1
2
3
4
5
6
7
8
9
? Internal pipelined operation; column address can be
changed every clock cycle
? Internal banks for hiding row access/precharge
? Programmable burst lengths: 1, 2, 4, or 8
? Auto precharge and concurrent auto precharge
A
B
C
V SS
DQ14
DQ12
DQ15
DQ13
DQ11
V SS Q
V DD Q
V SS Q
V DD Q
V SS Q
V DD Q
DQ0
DQ2
DQ4
V DD
DQ1
DQ3
modes
? Auto refresh and self refresh mode
D
DQ10
DQ9
V DD Q
V SS Q
DQ6
DQ5
? 64ms, 4,096-cycle refresh
? LVTTL-compatible inputs and outputs
? Partial-array self refresh (PASR) power-saving mode
? Deep power-down mode
? Programmable output drive strength
E
F
G
DQ8
UDQM
NC
DNU
CLK
A11
V SS
CKE
A9
V DD
CAS#
BA0
LDQM
RAS#
BA1
DQ7
WE#
CS#
? On-chip temperature sensor to control the self-
refresh rate
H
A8
A7
A6
A0
A1
A10
? Operating temperature ranges
– Commercial (0°C to +70°C)
J
V SS
A5
A4
A3
A2
V DD
– Industrial (–40°C to +85°C)
Top View
(Ball Down)
Options
? V DD /V DD Q
Marking
Table 1:
Address Table
– 1.8V/1.8V
? Configurations
H
Configuration
8 Meg x 16
2 Meg x 16 x 4 banks
– 8 Meg x 16 (2 Meg x 16 x 4 banks)
? Package/Ball out
– 54-ball VFBGA, 8mm x 8mm
? Timing (cycle time)
– 7.5ns @ CL = 3 (133 MHz)
8M16
B4
-75
Refresh count
Row addressing
Bank addressing
Column addressing
4K
4K (A0–A11)
4 (BA0, BA1)
512 (A0–A8)
– 8ns @ CL = 3 (125 MHz)
? Operating temperature
– Commercial (0 ° C to +70 ° C)
– Industrial (–40 ° C to +85 ° C)
? Die revision designator
-8
none
IT
:J
Table 2:
Speed
Key Timing Parameters
CL = CAS (READ) latency
Clock
Frequency Access Time
Setup Hold
Grade
CL = 2
CL = 3
CL = 2 CL = 3 Time
Time
-75
104
133
8ns
6ns
2.5ns
1ns
MHz
MHz
-8
83
125
8ns
7ns
2.5ns
1ns
MHz
MHz
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_1.fm - Rev. C 2/07 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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相关代理商/技术参数
MT48H8M16LFB4-8
制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT
制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT TR
功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘